ForLab Mat4μ
A project at the TU Bergakademie Freiberg
The Freiberg Microelectronics Research Laboratory for Power Electronics Materials is investigating new materials for applications in this field. The scientists led by Prof. Dr Johannes Heitmann at the Institute of Applied Physics at TU Bergakademie Freiberg are working, for example, on the deposition and characterisation of thin-film dielectrics and semiconductors with a large band gap for electronic and optoelectronic applications. The embedding of nanocrystalline semiconductors in dielectric layers is also one of the main areas of research.
In addition, as part of the ESF junior research group ‘Defect engineering in wide bandgap semiconductor materials for applications in optoelectronics and power electronics’, various spectroscopic methods for the electrical and optical characterisation of wide bandgap semiconductor materials have been established.
The researchers at ForLab Mat4µ can combine this defect characterisation by using a well-equipped clean room laboratory with the integration of the materials in test components at wafer level. This should make it possible to make statements about the possible effects of defects on components during material development. The Freiberg scientists want to simplify the integration of new semiconductor base materials into microelectronics and shorten innovation cycles in the materials sector.
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